Proximity effect in a planar superconductor/semiconductor junction
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چکیده
منابع مشابه
Proximity effect in planar Superconductor/Semiconductor junction
We have measured the very low temperature (down to 30mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer I stands for the Schottky barrier). As the temperature is lowered below the gap, the resistance increases as expected in SIN junction. Around 300mK, the resistance shows a maximum and decreases at lower...
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We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance is enhanced due to coherent backscattering of the electrons towards the interface by disorder in the silicon (”reflectionless tunneling”). This Zero Bias An...
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ژورنال
عنوان ژورنال: Physica B: Condensed Matter
سال: 2000
ISSN: 0921-4526
DOI: 10.1016/s0921-4526(99)02865-3